View MTY100N10E_112051.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTY100N10E/D
Designer'sTM Data Sheet
TMOS E-FET.TM Power Field Effect Transistor
N-Channel Enhancement-Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. * Avalanche Energy Specified * Diode is Characterized for Use in Bridge Circuits * IDSS and VDS(on) Specified at Elevated Temperature
D
MTY100N10E
Motorola Preferred Device
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM
(R)
G S Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg EAS RJC RJA TL
CASE 340G-02, STYLE 1 TO-264
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1 M) Gate-Source Voltage -- Continuous Gate-Source Voltage -- Non-Repetitive (tp 10 ms) Drain Current -- Continuous @ TC = 25C Drain Current -- Single Pulse (tp 10 s) Total Power Dissipation Derate above 25C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy -- Starting TJ = 25C (VDD = 80 Vdc, VGS = 10 Vdc, Peak IL = 100 Apk, L = 0.1 mH, RG = 25 ) Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
Value 100 100 20 40 100 300 300 2.38 - 55 to 150 250 0.42 40 260
Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/C C mJ C/W C
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
E-FET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola TMOS (c) Motorola, Inc. 1995 Power MOSFET Transistor Device Data
1
MTY100N10E
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 250 A) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 100 Vdc, VGS = 0 Vdc) (VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Threshold Temperature Coefficient (Negative) Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 50 Adc) Drain-Source On-Voltage (VGS = 10 Vdc) (ID = 100 Adc) (ID = 50 Adc, TJ = 125C) Forward Transconductance (VDS = 6 Vdc, ID = 50 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (See Figure 8) (VDS = 80 Vdc, ID = 100 Adc, VGS = 10 Vdc) (VDD = 50 Vdc, ID = 100 Adc, VGS = 10 Vdc, RG = 9.1 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 100 Adc, VGS = 0 Vdc) (IS = 100 Adc, VGS = 0 Vdc, TJ = 125C) VSD -- -- trr (IS = 100 Adc, VGS = 0 Vdc, dIS/dt = 100 A/s) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. LD LS -- -- 4.5 13 -- -- nH nH ta tb QRR -- -- -- -- 1 0.9 145 90 55 2.34 1.2 -- -- -- -- -- C ns Vdc -- -- -- -- -- -- -- -- 48 490 186 384 270 50 150 118 96 980 372 768 378 -- -- -- nC ns (VDS = 25 Vdc, VGS = 0 Vdc, f = 1 MHz) Ciss Coss Crss -- -- -- 7600 3300 1200 10640 4620 2400 pF VGS(th) 2.0 -- RDS(on) VDS(on) -- -- gFS 30 1.0 -- 49 1.2 1.0 -- mhos -- -- 7 -- 4 -- 0.011 Vdc mV/C Ohm Vdc V(BR)DSS 100 -- IDSS -- -- IGSS -- -- -- -- 10 200 100 nAdc -- 115 -- -- Vdc mV/C Adc Symbol Min Typ Max Unit
Reverse Recovery Time (See Figure 14)
2
Motorola TMOS Power MOSFET Transistor Device Data
MTY100N10E
TYPICAL ELECTRICAL CHARACTERISTICS
200 I D , DRAIN CURRENT (AMPS) VGS = 10 V 9V 8V TJ = 25C I D , DRAIN CURRENT (AMPS) 7V 120 100 80 60 40 20 0 100C TJ = - 55C 25C 0 0 2 4 6 8 10 2 3 4 5 6 7 8 9 10 VDS 10 V
160
120 6V
80
40
5V
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 0.018 VGS = 10 V 0.016 0.014 0.012 25C 0.01 0.008 - 55C 0.006 0 50 100 ID, DRAIN CURRENT (AMPS) 150 200 TJ = 100C RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
Figure 2. Transfer Characteristics
0.011 TJ = 25C 0.0105 0.01 0.0095 0.009 0.0085 0.008 15 V VGS = 10 V
0
50
100 ID, DRAIN CURRENT (AMPS)
150
200
Figure 3. On-Resistance versus Drain Current and Temperature
Figure 4. On-Resistance versus Drain Current and Gate Voltage
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
1.8 1.6 1.4 1.2 1 0.8 0.6 - 50 VGS = 10 V ID = 50 A
1000000 VGS = 0 V 100000 I DSS , LEAKAGE (nA) TJ = 125C
1000
100C
100
10
25C
- 25
0
25
50
75
100
125
150
1
0
20
40
60
80
100
120
TJ, JUNCTION TEMPERATURE (C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-To-Source Leakage Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
MTY100N10E
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (t) are determined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) can be made from a rudimentary analysis of the drive circuit so that t = Q/IG(AV) During the rise and fall time interval when switching a resistive load, VGS remains virtually constant at a level known as the plateau voltage, VSGP. Therefore, rise and fall times may be approximated by the following: tr = Q2 x RG/(VGG - VGSP) tf = Q2 x RG/VGSP where VGG = the gate drive voltage, which varies from zero to VGG RG = the gate drive resistance and Q2 and VGSP are read from the gate charge curve. During the turn-on and turn-off delay times, gate current is not constant. The simplest calculation uses appropriate values from the capacitance curves in a standard equation for voltage change in an RC network. The equations are: td(on) = RG Ciss In [VGG/(VGG - VGSP)] td(off) = RG Ciss In (VGG/VGSP) The capacitance (Ciss) is read from the capacitance curve at a voltage corresponding to the off-state condition when calculating td(on) and is read at a voltage corresponding to the on-state when calculating td(off). At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses.
24000 VDS = 0 V 20000 C, CAPACITANCE (pF) Ciss 16000 12000 8000 Coss 4000 Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 Crss Ciss VGS = 0 V TJ = 25C
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
4
Motorola TMOS Power MOSFET Transistor Device Data
MTY100N10E
VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 12 QT 10 VGS 8 Q1 6 4 2 0 Q3 0 50 100 150 200 VDS 250 Qg, TOTAL GATE CHARGE (nC) TJ = 25C ID = 100 A Q2 60 40 20 0 300 80 100 120 10000 VDD = 50 V ID = 100 A VGS = 10 V TJ = 25C tr tf 100 td(off) td(on) 10
t, TIME (ns)
1000
1
10 RG, GATE RESISTANCE (OHMS)
100
Figure 8. Gate Charge versus Gate-to-Source Voltage
Figure 9. Resistive Switching Time Variation versus Gate Resistance
DRAIN-TO-SOURCE DIODE CHARACTERISTICS
100 VGS = 0 V TJ = 25C
I S , SOURCE CURRENT (AMPS)
80
60
40
20
0 0.5
0.6
0.7
0.8
0.9
1
1.1
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define the maximum simultaneous drain-to-source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, "Transient Thermal Resistance-General Data and Its Use." Switching between the off-state and the on-state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 s. In addition the total power averaged over a complete switching cycle must not exceed (TJ(MAX) - TC)/(RJC). A Power MOSFET designated E-FET can be safely used in switching circuits with unclamped inductive loads. For reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating conditions differing from those specified. Although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. The energy rating decreases non-linearly with an increase of peak current in avalanche and peak junction temperature. Although many E-FETs can withstand the stress of drain- to-source avalanche at currents up to rated pulsed current (IDM), the energy rating is specified at rated continuous current (ID), in accordance with industry custom. The energy rating must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at currents below rated continuous ID can safely be assumed to equal the values indicated.
Motorola TMOS Power MOSFET Transistor Device Data
5
MTY100N10E
SAFE OPERATING AREA
1000 VGS = 20 V SINGLE PULSE TC = 25C 100 100 s 1 ms 10 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 0.1 1 10 10 ms dc E , SINGLE PULSE DRAIN-TO-SOURCE AS AVALANCHE ENERGY (mJ) 250 ID = 100 A 200
I D , DRAIN CURRENT (AMPS)
10 s
150
100
50
100
0
25
50
75
100
125
150
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
TJ, STARTING JUNCTION TEMPERATURE (C)
Figure 11. Maximum Rated Forward Biased Safe Operating Area
r (t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature
1 D = 0.5 0.2 0.1 0.1 0.02 0.01 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 t1 0.05 P(pk)
RJC(t) = r(t) RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t)
0.01 1.0E-05
1.0E-04
1.0E-03
1.0E-02 t, TIME (s)
1.0E-01
1.0E+00
1.0E+01
Figure 13. Thermal Response
di/dt IS trr ta tb TIME tp IS 0.25 IS
Figure 14. Diode Reverse Recovery Waveform
6
Motorola TMOS Power MOSFET Transistor Device Data
MTY100N10E
PACKAGE DIMENSIONS
0.25 (0.010)
M
TB
M
-T- C U N A R
1 2 3
E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 2.8 2.9 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.0 11.4 3.95 4.75 2.2 2.6 3.1 3.5 2.15 2.35 6.1 6.5 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.433 0.449 0.156 0.187 0.087 0.102 0.122 0.137 0.085 0.093 0.240 0.256 0.110 0.125
L
P K
F 2 PL G
W D 3 PL 0.25 (0.010)
M
J H YQ
S
DIM A B C D E F G H J K L N P Q R U W
STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE
CASE 340G-02 TO-264 ISSUE E
Motorola TMOS Power MOSFET Transistor Device Data
7
MTY100N10E
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
8
Motorola TMOS Power MOSFET Transistor Device Data MTY100N10E/D
*MTY100N10E/D*

▲Up To Search▲

Price & Availability of MTY100N10E

	To Download MTY100N10E Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .